Is a
Patent attributes
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
October 16, 2018
Patent Application Number
15487112
Date Filed
April 13, 2017
Patent Citations Received
Patent Primary Examiner
Patent abstract
A multi-band RF power amplifier circuit fabricated using GaN technology includes a RF power amplifier coupled to a multi-band RF switch without an intervening impedance matching network between the RF power amplifier and the multi-band RF switch. The multi-band RF switch includes a plurality of Unit HEMT cells. In one IC package, the RF power amplifier, the multi-band RF switch, a controller for controlling the switch and all connection therebetween are totally contained within the IC package. In another IC package, the RF power amplifier and the multi-band RF switch are disposed on a single substrate.
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