Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Delphine Longrie0
Han Wang0
Harald Profijt0
Jan Willem Maes0
Julian Hsieh0
Timo Asikainen0
Chiyu Zhu0
David de Roest0
...
Date of Patent
November 6, 2018
Patent Application Number
15432263
Date Filed
February 14, 2017
Patent Citations Received
...
Patent Primary Examiner
Patent abstract
Methods are provided for selectively depositing Al and N containing material on a first conductive surface of a substrate relative to a second, dielectric surface of the same substrate. In some aspects, methods of forming an Al and N containing protective layer or etch stop layer for use in integrated circuit fabrication are provided.
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