US Patent 10121816 Imaging device and method of manufacturing imaging device

An imaging device includes a plurality of pixels. Each of the pixels includes a photoelectric conversion unit provided in a first semiconductor region of a first conductivity type, a transfer transistor including a second semiconductor region of a second conductivity type to which charge generated in the photoelectric conversion unit is transferred, a third semiconductor region of the first conductivity type provided in a portion deeper than the second semiconductor region and having a higher impurity concentration than the first semiconductor region, and a counter doped region provided around the second semiconductor region. A part of the third semiconductor region and a part the counter doped region are overlapped with a gate electrode of the transfer transistor in a plan view. An overlap of the counter doped region with respect to the gate electrode is larger than an overlap of the third semiconductor region with respect to the gate electrode.