Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
November 6, 2018
Patent Application Number
15421371
Date Filed
January 31, 2017
Patent Citations Received
Patent Primary Examiner
Patent abstract
Provided is a semiconductor device having an RC-IGBT structure, the semiconductor device comprising an FWD (Free Wheel Diode) region and an IGBT (Insulated Gate Bipolar Transistor) region. Provided is a semiconductor device comprising:
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