Patent attributes
A provided semiconductor device includes a Ge photodiode having proper diode characteristics. A groove is provided on a germanium growth protective film, a p-type silicon layer, and a first insulating film from the top surface of the germanium growth protective film without reaching the major surface of a semiconductor substrate. An i-type germanium layer and an n-type germanium layer are embedded in the groove with a seed layer interposed between the layers and the groove, the seed layer being made of amorphous silicon, polysilicon, or silicon germanium. The i-type germanium layer and the n-type germanium layer do not protrude from the top surface of the germanium growth protective film, thereby forming a flat second insulating film having a substantially even thickness on the n-type germanium layer and the germanium growth protective film.
