Is a
Patent attributes
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
November 13, 2018
Patent Application Number
15346886
Date Filed
November 9, 2016
Patent Citations Received
Patent Primary Examiner
Patent abstract
A method of plasma etching includes an etching process that generates plasma from a process gas that includes fluorocarbon by using first high frequency power output by a first high frequency power source, and by the generated plasma, etches a low-k film with a metal-containing film as a mask. In the etching process, the first high frequency power is intermittently applied.
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