Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Jung Hoon Han0
Hiroshi Takeda0
Jae Joon Song0
Ji Hun Kim0
Dong Wan Kim0
Date of Patent
November 20, 2018
0Patent Application Number
156448770
Date Filed
July 10, 2017
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A semiconductor device including a substrate; a trench formed within the substrate; a gate insulating film formed conformally along a portion of a surface of the trench; a gate electrode formed on the gate insulating film and filling a portion of the trench; a capping film formed on the gate electrode and filling the trench; and an air gap formed between the capping film and the gate insulating film.
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