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US Patent 10141312 Semiconductor devices including insulating materials in fins
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Patent
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Date Filed
October 18, 2016
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Date of Patent
November 27, 2018
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Patent Applicant
Samsung
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Patent Application Number
15296703
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Patent Citations Received
US Patent 11398425 Semiconductor devices with insulated source/drain jumper structures
US Patent 10699998 Semiconductor devices with insulated source/drain jumper structures
US Patent 10763256 Integrated circuit device and method of fabricating the same
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US Patent 10879239 Integrated circuit device and method of fabricating the same
US Patent 10978299 Semiconductor devices
US Patent 11316010 Integrated circuit device and method of fabricating the same
US Patent 11769769 Integrated circuit device and method of fabricating the same
US Patent 11462537 Semiconductor device
US Patent 10665588 Integrated circuit device and method of fabricating the same
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Patent Inventor Names
Ho-Jin Jeon
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Je-Min Yoo
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Young-Gun Ko
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Gi-Gwan Park
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Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
10141312
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Patent Primary Examiner
Moazzam Hossain
0
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