US Patent 10147763 Resistive memory cell structures and methods
Patent 10147763 was granted and assigned to Micron Technology on December, 2018 by the United States Patent and Trademark Office.
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Patent abstract
Resistive memory cell structures and methods are described herein. One or more memory cell structures comprise a first resistive memory cell comprising a first resistance variable material and a second resistive memory cell comprising a second resistance variable material that is different than the first resistance variable material.
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Patent Inventor Names
Fabio Pellizzer0
Ferdinando Bedeschi0
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Patent Citations Received
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Is a
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
101477630
Date of Patent
December 4, 2018
0Patent Application Number
158369780
Date Filed
December 11, 2017
0Patent Citations Received
Patent Primary Examiner
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US Patent 10147763 Resistive memory cell structures and methods
Infobox
Is a
Patent applicant
Current assignee
Patent jurisdiction
Patent number
10147763
Date of patent
December 4, 2018
Patent application number
15836978
Date Filed
December 11, 2017
Patent primary examiner
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