Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Tai-Yuan Wang0
Date of Patent
December 4, 2018
0Patent Application Number
156092290
Date Filed
May 31, 2017
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A semiconductor structure includes a semiconductor substrate, at least one source drain structure, an insulating layer, and a gate. The semiconductor substrate includes a base portion and at least one fin. The fin is disposed on the base portion. The source drain structure is disposed on at least one sidewall of the fin. The insulating layer is disposed between the base portion and the source drain structure to isolate the base portion and the source drain structure. The gate is disposed on the fin.
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