US Patent 10147875 Semiconductor devices and electronic systems having memory structures

A semiconductor device comprises includes memory cells, a first dielectric liner material overlying side surfaces of the memory cells, a high-k dielectric material overlying side surfaces of the first dielectric liner material, a second dielectric liner material overlying side surfaces of the high-k dielectric material, and an additional dielectric material overlying side surfaces of the second dielectric liner material. A memory structure, an electronic system, and a method of forming a memory structure are also described.