Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Jyh-Huei Chen0
Chia-Ming Hsu0
Chih-Pin Tsao0
Pei-Yu Chou0
Kuang-Yuan Hsu0
Date of Patent
December 11, 2018
Patent Application Number
15378574
Date Filed
December 14, 2016
Patent Citations Received
Patent Primary Examiner
Patent abstract
In a method of manufacturing a semiconductor device, a first contact hole is formed in one or more dielectric layers disposed over a source/drain region or a gate electrode. An adhesive layer is formed in the first contact hole. A first metal layer is formed on the adhesive layer in the first contact hole. A silicide layer is formed on an upper surface of the first metal layer. The silicide layer includes a same metal element as the first metal layer.
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