Patent attributes
A semiconductor device and a method for fabricating the semiconductor device are provided. The method includes providing a semiconductor substrate including a first region and a second region, and forming a plurality of fins on the semiconductor substrate in the first region and the second region. The method also includes forming a first barrier layer on surfaces of the fins in the first region, and forming an isolation fluid layer on the semiconductor substrate to cover the first barrier layer in the first region and to cover the fins in the second region. Further, the method includes forming an isolation film and a by-product layer by an oxygen-containing annealing process respectively from the isolation fluid layer and sidewalls of the fins in the second region.
