Log in
Enquire now
‌

US Patent 10163479 Method and apparatus for bipolar memory write-verify

Patent 10163479 was granted and assigned to Spin Transfer Technologies on December, 2018 by the United States Patent and Trademark Office.

OverviewStructured DataIssuesContributors

Contents

Is a
Patent
Patent

Patent attributes

Patent Applicant
Spin Transfer Technologies
Spin Transfer Technologies
Current Assignee
Spin Transfer Technologies
Spin Transfer Technologies
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
10163479
Date of Patent
December 25, 2018
Patent Application Number
15174482
Date Filed
June 6, 2016
Patent Citations Received
‌
US Patent 11621293 Multi terminal device stack systems and methods
0
‌
US Patent 10891997 Memory array with horizontal source line and a virtual source line
‌
US Patent 10930332 Memory array with individually trimmable sense amplifiers
‌
US Patent 10971680 Multi terminal device stack formation methods
‌
US Patent 10347314 Method and apparatus for bipolar memory write-verify
‌
US Patent 10360962 Memory array with individually trimmable sense amplifiers
‌
US Patent 10360964 Method of writing contents in memory during a power up sequence using a dynamic redundancy register in a memory device
‌
US Patent 10366774 Device with dynamic redundancy registers
...
Patent Primary Examiner
‌
Connie Yoha
Patent abstract

An advantageous write verify operation for bipolar memory devices is disclosed. The verify operation is performed under the same bias conditions as the write operation. Thus, the verify operation reduces disturb conditions caused when verify operation is performed in opposite bias to write operation. The advantageous write verify operation may be performed with control logic on source and bit lines. In another embodiment, the advantageous write operation is performed with mux coupled to control logic. The mux determines whether verify (0) or verify (1) operation should be performed based on data in a program latch. Moreover, the mux may select bias conditions for read operations based on a register bit. Trim circuits optionally provide guard banding and modify reference voltages for verify operations performed in opposite polarity to normal read operation.

Timeline

No Timeline data yet.

Further Resources

Title
Author
Link
Type
Date
No Further Resources data yet.

References

Find more entities like US Patent 10163479 Method and apparatus for bipolar memory write-verify

Use the Golden Query Tool to find similar entities by any field in the Knowledge Graph, including industry, location, and more.
Open Query Tool
Access by API
Golden Query Tool
Golden logo

Company

  • Home
  • Press & Media
  • Blog
  • Careers
  • WE'RE HIRING

Products

  • Knowledge Graph
  • Query Tool
  • Data Requests
  • Knowledge Storage
  • API
  • Pricing
  • Enterprise
  • ChatGPT Plugin

Legal

  • Terms of Service
  • Enterprise Terms of Service
  • Privacy Policy

Help

  • Help center
  • API Documentation
  • Contact Us