Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Horng-Huei Tseng0
Che-Cheng Chang0
Chih-Han Lin0
Date of Patent
December 25, 2018
Patent Application Number
14987598
Date Filed
January 4, 2016
Patent Citations Received
Patent Primary Examiner
Patent abstract
A semiconductor structure includes a substrate, at least one first gate structure, at least one first spacer, at least one source drain structure, and a conductive plug. The first gate structure is present on the substrate. The first spacer is present on at least one sidewall of the first gate structure. The source drain structure is present adjacent to the first spacer. The conductive plug is electrically connected to the source drain structure while leaving a gap between the conductive plug and the spacer.
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