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US Patent 10164048 Method for forming source/drain contacts

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
Date Filed
February 26, 2018
Date of Patent
December 25, 2018
Patent Application Number
15904502
Patent Citations Received
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US Patent 11355587 Source/drain EPI structure for device boost
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US Patent 10453947 Semiconductor structure and high electron mobility transistor with a substrate having a pit, and methods for fabricating semiconductor structure
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US Patent 11532522 Source/drain EPI structure for improving contact quality
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US Patent 10651287 Method for forming source/drain contacts
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US Patent 10879124 Method to form a fully strained channel region
0
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US Patent 11769817 Method for forming source/drain contacts
Patent Inventor Names
Shih-Chieh Chang
0
Chun Hsiung Tsai
0
Kuo-Feng Yu
0
Shahaji B. More
0
Cheng-Yi Peng
0
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
10164048
Patent Primary Examiner
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Chuong A Luu

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