US Patent 10168143 Strain monitoring of MRAM arrays
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Patent abstract
A method is presented for determining strain in a magnetoresistive random access memory (MRAM) structure. The method includes exposing long lines of the MRAM structure to monochromatic light to produce a diffraction pattern, measuring changes in interference fringe spacing in the diffraction pattern, determining the changes in the local strain in the MRAM structure from the measured changes in the interference fringe spacing, and assessing a performance of the MRAM structure from values of the changes in the local strain.
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Patent Jurisdiction
Patent Number
101681430
Date of Patent
January 1, 2019
0Patent Application Number
154534310
Date Filed
March 8, 2017
0Patent Citations Received
Patent Primary Examiner
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Patent Citations Received
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Patent Citations Received
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Infobox
Is a
Patent Jurisdiction
Patent Number
101681430
Date of Patent
January 1, 2019
0Patent Application Number
154534310
Date Filed
March 8, 2017
0Patent Primary Examiner
Edits on 24 Jan, 2022
Golden AI
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US Patent 10168143 Strain monitoring of MRAM arrays
Infobox
Is a
Patent jurisdiction
Patent number
10168143
Date of patent
January 1, 2019
Patent application number
15453431
Date Filed
March 8, 2017
Patent primary examiner
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