Patent attributes
An electrostatic discharge protection circuit is provided. The electrostatic discharge protection circuit includes a first metal-oxide-semiconductor (MOS) transistor, a second MOS transistor, and a third MOS transistor. The first MOS transistor is coupled between a power terminal and a ground terminal. The first MOS transistor has a control electrode terminal coupled to a first node to receive a first signal. The second MOS transistor has a control electrode terminal and a first electrode terminal both coupled to the first node and a second electrode terminal coupled to a bulk of the first MOS transistor. The third MOS transistor has a control electrode terminal coupled to a second node to receive a second node, a first electrode terminal coupled to the first node, and a second electrode terminal coupled to the bulk of the first MOS transistor. The first signal is inverse to the second signal.