Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
January 8, 2019
Patent Application Number
15906135
Date Filed
February 27, 2018
Patent Citations Received
Patent Primary Examiner
Patent abstract
According to one embodiment, a memory device includes a nonvolatile memory element including a stacked structure and having a first resistive state and a second resistive state having higher resistance than the first resistive state, the stacked structure including a first layer containing bismuth (Bi) and tellurium (Te) and a second layer containing germanium (Ge) and tellurium (Te).
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