Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
January 22, 2019
Patent Application Number
15700055
Date Filed
September 8, 2017
Patent Citations Received
Patent Primary Examiner
Patent abstract
An optoelectronic device and method of making the same. The device comprising: a substrate; a regrown cladding layer, on top of the substrate; and an optically active region, above the regrown cladding layer; wherein the regrown cladding layer has a refractive index which is less than a refractive index of the optically active region, such that an optical mode of the optoelectronic device is confined to the optically active region, and wherein the optically active region is formed of: SiGeSn, GeSn, InGaNAs, or InGaNAsSb.
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