Patent attributes
A half bridge GaN circuit is disclosed. The circuit includes a low side power switch configured to be selectively conductive according to one or more input signals, a high side power switch configured to be selectively conductive according to the one or more input signals, and a high side power switch controller, configured to control the conductivity of the high sigh power switch based on the one or more input signals. The high side power switch controller includes a capacitor, and a logic circuit, wherein the capacitor is configured to capacitively couple a signal based on the input signals to the logic circuit, and the logic circuit is configured to control the conductivity of the high sigh power switch based on the capacitively coupled signal.
