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US Patent 10199083 Three-terminal MRAM with ac write-assist for low read disturb

Patent 10199083 was granted and assigned to Spin Transfer Technologies on February, 2019 by the United States Patent and Trademark Office.

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Patent abstract

Methods and structures useful for magnetoresistive random-access memory (MRAM) are disclosed. The MRAM device has a magnetic tunnel junction stack having a significantly improved performance of the free layer in the magnetic tunnel junction structure. The MRAM device also utilizes a three-terminal structure, thereby allowing efficient writing of the bit without a concomitant increase in read disturb.

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