Is a
Patent attributes
Patent Applicant
0
Current Assignee
0
Patent Jurisdiction
Patent Number
Patent Inventor Names
Wei-Chuan Tsai0
Hsin-Fu Huang0
Li-Han Chen0
Min-Chuan Tsai0
Chun-Chieh Chiu0
Yen-Tsai Yi0
Date of Patent
February 5, 2019
0Patent Application Number
153615030
Date Filed
November 28, 2016
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A conductive structure includes a substrate including a first dielectric layer formed thereon, at least a first opening formed in the first dielectric layer, a low resistive layer formed in the opening, and a first metal bulk formed on the lower resistive layer in the opening. The first metal bulk directly contacts a surface of the first low resistive layer. The low resistive layer includes a carbonitride of a first metal material, and the first metal bulk includes the first metal material.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
