Patent attributes
A device that includes a magnetic memory device, includes a magnetic tunnel junction pattern on a substrate and a mask structure on the magnetic tunnel junction pattern. The mask structure includes a conductive pattern and a sacrificial pattern, where the conductive pattern is between the magnetic tunnel junction pattern and the sacrificial pattern, and the sacrificial pattern includes a material having an etch selectivity with respect to the conductive pattern. The device includes an upper contact plug in contact with a surface of the conductive pattern of the mask structure. The device includes a lower interlayered insulating layer covering a cell region and a peripheral circuit region of the substrate, where the lower interlayered insulating layer on the cell region has a recessed top surface between adjacent magnetic tunnel junction patterns.
