Patent attributes
An SiC wafer producing method includes setting a focal point of a pulsed laser beam to a single crystal SiC inside an ingot at a predetermined depth from an end surface of the ingot, the predetermined depth corresponding to the thickness of the wafer to be produced. The pulsed laser beam is applied to the ingot, thereby forming a small circular modified portion on a c-plane present in the ingot at the predetermined depth, in which the modified portion is a region where SiC has been decomposed into Si and C. A separation layer is formed for separating the wafer from the ingot, the separation layer being composed of a plurality of continuous modified portions and a plurality of cracks isotropically formed on the c-plane so as to extend from each modified portion.
