Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Kazutaka Kuriki0
Hiromichi Godo0
Junpei Momo0
Date of Patent
February 12, 2019
0Patent Application Number
148172420
Date Filed
August 4, 2015
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A semiconductor device in which a circuit and a power storage element are efficiently placed is provided. The semiconductor device includes a first transistor, a second transistor, and an electric double-layer capacitor. The first transistor, the second transistor, and the electric double-layer capacitor are provided over one substrate. A band gap of a semiconductor constituting a channel region of the second transistor is wider than a band gap of a semiconductor constituting a channel region of the first transistor. The electric double-layer capacitor includes a solid electrolyte.
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