US Patent 10211055 Fin patterns with varying spacing without fin cut

Methods of forming semiconductor fins include forming first spacers on a first sidewall of each of multiple mandrels using an angled deposition process. A second sidewall of one or more of the mandrels is masked in a finless region. Second spacers are formed on a second sidewall of all unmasked mandrels. Semiconductor fins are formed from a substrate using the first and second spacers as a pattern mask.