Patent 10211110 was granted and assigned to Hitachi Kokusai Electric Inc. on February, 2019 by the United States Patent and Trademark Office.
A method of manufacturing a semiconductor device includes supplying an inert gas into a process chamber; exhausting an internal atmosphere of the process chamber from an exhaust part; acquiring first data serving as reference data on a relationship between a flow rate of the inert gas and a pressure in one of the process chamber or the exhaust part; processing a substrate accommodated in the process chamber by supplying a processing gas into the process chamber; and adjusting exhaust characteristics by adjusting a valve opening degree of an exhaust regulating part installed in the exhaust part.