Patent attributes
A semiconductor light emitting device includes a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, sequentially stacked on a substrate along a first direction, and including an exposed region exposing the first conductivity-type semiconductor layer. A first contact electrode is in the exposed region, a second contact electrode is on the second conductivity-type semiconductor layer, and an insulating layer covers the light emitting structure. Separate electrode pads penetrate the insulating layer to be electrically connected to the first contact electrode and the second contact electrode. A side surface of at least one of the first and second electrode pads may extend to be coplanar with a side surface of the substrate along the first direction.
