Patent attributes
A highly integrated semiconductor device including a transistor and a capacitor which occupies a small area for the required on-state current and required capacitance is provided. The semiconductor device includes a semiconductor, first and second conductive films each in contact with top and side surfaces of the semiconductor, a first insulating film in contact with the top and side surfaces of the semiconductor, a third conductive film facing the top and side surfaces of the semiconductor with the first insulating film therebetween, a second insulating film which is in contact with the first conductive film and comprises an opening, a fourth conductive film in contact with the opening, a third insulating film facing the opening with the fourth conductive film therebetween, and a fifth conductive film facing the fourth conductive film with the third insulating film therebetween.
