Is a
Patent attributes
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
February 26, 2019
Patent Application Number
15641877
Date Filed
July 5, 2017
Patent Citations Received
Patent Primary Examiner
Patent abstract
In one embodiment, an insulated gate bipolar transistor (IGBT) device may include an NMOS portion and a PNP portion, where the PNP portion is coupled to the NMOS portion. The PNP portion may include a base and a collector. The IGBT may further include a flyback clamp, where the flyback clamp is coupled between the base and the collector of the PNP portion.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
