Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Juntao Li0
Kangguo Cheng0
Peng Xu0
Heng Wu0
Date of Patent
March 12, 2019
0Patent Application Number
158306650
Date Filed
December 4, 2017
0Patent Citations Received
...
Patent Primary Examiner
Patent abstract
A method of forming a semiconductor structure includes patterning two or more fins over a top surface of a bottom source/drain layer, the bottom source/drain layer disposed over a substrate. The method also includes forming bottom spacers disposed over the top surface of the bottom source/drain layer between the two or more fins, the bottom spacers having a uniform height on sidewalls of the two or more fins. The bottom spacers comprise dielectric regions disposed adjacent the sidewalls of the two or more fins and at least partially filling divots in the bottom source/drain regions, and liner regions disposed adjacent the dielectric regions. The two or more fins comprise channels for a vertical field-effect transistor (VFET) device.
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