Patent attributes
Structures for interconnects and methods for forming interconnects. A dual-damascene opening is formed in a dielectric layer and a first liner is formed on the dielectric layer at one or more sidewalls of the dual-damascene opening. A first conductor layer is formed in a portion of the dual-damascene opening. The first liner is removed from the one or more sidewalls of the dual-damascene opening vertically between the first conductor layer and a top surface of the dielectric layer. After the first liner is removed, a second liner is formed on the dielectric layer at the one or more sidewalls of the dual-damascene opening between the first conductor layer and the top surface of the dielectric layer. A second conductor layer is formed in the dual-damascene opening between the first conductor layer and the top surface of the dielectric layer. The first and second liner materials differ in composition.
