Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Ryong Ha0
Hyo Jin Kim0
Hyun Kwan Yu0
Date of Patent
March 26, 2019
0Patent Application Number
158004830
Date Filed
November 1, 2017
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A semiconductor device is provided. The semiconductor device includes a fin-type pattern formed on a substrate and including first and second sidewalls, which are defined by a trench, a field insulating film placed in contact with the first and second sidewalls and filling the trench, and an epitaxial pattern formed on the fin-type pattern and including a first epitaxial layer and a second epitaxial layer, which is formed on the first epitaxial layer.
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