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US Patent 10249666 Image sensors including shifted isolation structures

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Patent abstract

Image sensors are provided. An image sensor includes a semiconductor substrate including a pixel region. The image sensor includes first and second photoelectric conversion elements in the pixel region. The image sensor includes an isolation region between the first and second photoelectric conversion elements. The isolation region is off-center with respect to the pixel region.

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Patent Citations Received
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US Patent 10886318 Image sensor
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Patent Citations Received
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US Patent 10998365 Image sensor
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US Patent 10886318 Image sensor
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Patent citations received
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US Patent 11372312 Image sensor including auto focus pixel
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US Patent 10998365 Image sensor
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Patent citations received
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US Patent 10886318 Image sensor
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edited on 8 Feb, 2022
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US Patent 10861892 Low-light-level CMOS image sensor pixel
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US Patent 10658411 Image sensors including shifted isolation structures
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 US Patent 10249666 Image sensors including shifted isolation structures

Infobox
Is a
Patent
Patent
Patent jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent number
10249666
Date of patent
April 2, 2019
Patent application number
15605076
Date Filed
May 25, 2017
Patent citations
‌
US Patent 10021328 Imaging device, imaging system, and manufacturing method of imaging device
Patent primary examiner
‌
Victoria K. Hall

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