US Patent 10255953 Bi-directional RRAM decoder-driver

The present disclosure generally relates to the fabrication of and methods for creating a reversible tri-state memory device which provides both forward and reverse write and read drive to a bi-directional RRAM cell, thus allowing writing in the forward and reverse directions. The memory device, however, utilizes a single transistor “on pitch” which fits between two metal lines traversing the array tile.