Patent attributes
A semiconductor device 1 includes a first drain terminal 4, connected to a drain electrode of a first semiconductor chip, a first gate terminal 5, connected to a gate electrode of the first semiconductor chip, a second drain terminal 6, connected to a drain electrode of a second semiconductor chip, a second gate terminal 7, connected to a gate electrode of the second semiconductor chip, a common source terminal 8, connected to a source electrode of the first semiconductor chip and a source electrode of the second semiconductor chip, and a sealing resin 9, sealing the respective semiconductor chips and the respective terminals. The respective terminals have exposed surfaces (lower surfaces) 43, 53, 63, 73, and 83 substantially flush with an outer surface (lower surface) 9b of the sealing resin 9 and exposed from the outer surface 9b.
