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US Patent 10269566 Etching substrates using ale and selective deposition

Patent 10269566 was granted and assigned to Lam Research on April, 2019 by the United States Patent and Trademark Office.

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Current Assignee
Lam Research
Lam Research
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Date Filed
April 21, 2017
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Date of Patent
April 23, 2019
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Patent Applicant
Lam Research
Lam Research
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Patent Application Number
15494245
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Patent Citations Received
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US Patent 11450513 Atomic layer etching and smoothing of refractory metals and other high surface binding energy materials
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US Patent 10566213 Atomic layer etching of tantalum
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US Patent 11239094 Designer atomic layer etching
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US Patent 10685836 Etching substrates using ALE and selective deposition
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US Patent 10727073 Atomic layer etching 3D structures: Si and SiGe and Ge smoothness on horizontal and vertical surfaces
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US Patent 10763083 High energy atomic layer etching
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US Patent 10796912 Eliminating yield impact of stochastics in lithography
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US Patent 10832909 Atomic layer etch, reactive precursors and energetic sources for patterning applications
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US Patent 11257674 Eliminating yield impact of stochastics in lithography
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US Patent 10494715 Atomic layer clean for removal of photoresist patterning scum
•••
Patent Inventor Names
Nader Shamma
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Samantha Tan
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Yang Pan
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Jengyi Yu
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Richard Wise
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
10269566
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Patent Primary Examiner
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Shamim Ahmed
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