US Patent 10269704 Semiconductor device and method
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Patent abstract
A structure and method for the formation and use of fuses within a semiconductor device is provided. The fuses may be formed within the third metal layer and are formed so as to be arranged perpendicularly to active devices located on an underlying semiconductor substrate. Additionally, the fuses within the third metal layer may be formed thicker than an underlying second metal layer.
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Patent Applicant
Patent Jurisdiction
Patent Number
102697040
Date of Patent
April 23, 2019
0Patent Application Number
159852760
Date Filed
May 21, 2018
0Official Website
Patent Primary Examiner
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Infobox
Is a
Patent Applicant
Patent Jurisdiction
Patent Number
102697040
Date of Patent
April 23, 2019
0Patent Application Number
159852760
Date Filed
May 21, 2018
0Official Website
Patent Primary Examiner
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US Patent 10269704 Semiconductor device and method
Infobox
Is a
Patent applicant
Patent jurisdiction
Patent number
10269704
Date of patent
April 23, 2019
Patent application number
15985276
Date Filed
May 21, 2018
Patent primary examiner
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