Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
April 23, 2019
Patent Application Number
15855256
Date Filed
December 27, 2017
Patent Citations Received
Patent Primary Examiner
Patent abstract
A semiconductor device includes a gate structure extending from a first surface into a semiconductor portion and having a metal gate electrode and a gate dielectric separating the metal gate electrode from the semiconductor portion. An interlayer dielectric separates a first load electrode from the semiconductor portion, and includes a screen oxide layer thinner than the gate dielectric. A body zone and a source zone are formed in the semiconductor portion and directly adjoin the gate structure.
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