Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
April 23, 2019
Patent Application Number
15911681
Date Filed
March 5, 2018
Patent Citations Received
Patent Primary Examiner
Patent abstract
A highly reliable semiconductor device and a method for manufacturing the semiconductor device are provided. The semiconductor device is manufactured with a high yield, so that high productivity is achieved. In a semiconductor device including a transistor in which a source electrode layer and a drain electrode layer are provided over and in contact with an oxide semiconductor film, entry of impurities and formation of oxygen vacancies in an end face portion of the oxide semiconductor film are suppressed. This can prevent fluctuation in the electric characteristics of the transistor which is caused by formation of a parasitic channel in the end face portion of the oxide semiconductor film.
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