Patent attributes
A plasma processing apparatus includes: a processing container; a processing gas supply unit; a mounting table configured to mount a to-be-processed substrate thereon; an upper electrode provided above the mounting table; a plasma generation unit configured to supply a high frequency power to generate plasma of the processing gas; an exhaust flow path formed by a side wall of the processing container and a side surface of the mounting table; a conductive rectification plate configured to adjust a flow of the processing gas discharged to outside of the processing container; a conductor arranged in the exhaust flow path at a position higher than the rectification plate and lower than the to-be-processed substrate to face at least a part of the upper electrode. A distance of the conductor in the height direction in relation to the to-be-processed surface of the substrate is set to be within a predetermined range.
