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US Patent 10276554 Integrated standard cell structure
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Patent
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Date Filed
June 14, 2018
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Date of Patent
April 30, 2019
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Patent Application Number
16008563
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Patent Citations Received
US Patent 11374104 Methods of reducing capacitance in field-effect transistors
US Patent 10868199 Standard integrated cell with capacitive decoupling structure
US Patent 10971586 Double height cell regions, semiconductor device having the same, and method of generating a layout diagram corresponding to the same
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US Patent 11055465 Fill techniques for avoiding Boolean DRC failures during cell placement
US Patent 11756999 Double height cell regions, semiconductor device having the same, and method of generating a layout diagram corresponding to the same
US Patent 11329039 Integrated circuit including integrated standard cell structure
US Patent 10770449 Integrated standard cell structure
Patent Inventor Names
Fang Chen
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Jhon Jhy Liaw
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Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
10276554
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Patent Primary Examiner
Tu-Tu V Ho
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