Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Hideo Eto0
Masahiro Okesaku0
Michito Miyahara0
Yukio Okudo0
Hiroshi Sanda0
Makoto Saito0
Date of Patent
May 7, 2019
0Patent Application Number
155621040
Date Filed
March 30, 2016
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A silicon carbide member for a plasma processing apparatus is obtained by mixing an α-silicon carbide powder having an average particle size of 0.3 to 3 μm, with an amount of metal impurities in the α-silicon carbide powder reduced to 20 ppm or less, and a sintering aid comprising B4C in amount of 0.5 to 5 weight parts or Al2O3 and Y2O3 in total amount of 3 to 15 weight parts; sintering a mixture of the α-silicon carbide powder and the sintering aid in an argon atmosphere furnace or a high-frequency dielectric heating furnace; and then processing the resulting sintered body. The resulting silicon carbide member for a plasma processing apparatus is low cost and durable.
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