Patent attributes
A first vertical transistor device associated with a first conductivity type is formed within a first tier. A second vertical transistor device associated with a second conductivity type is formed within a second tier. The first vertical transistor device is connected to the second vertical transistor device to create a stacked vertical transistor device for three-dimensional monolithic integration such that the first vertical transistor device is located below the second vertical transistor device within the stacked vertical transistor device. Connecting the first vertical transistor device to the second vertical transistor device includes forming interconnects from a top of the second tier to respective positions within the first tier by forming vias and filling the vias with interconnect material.
