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US Patent 10283561 Two-terminal spintronic devices

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
December 12, 2017
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Date of Patent
May 7, 2019
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Patent Application Number
15839081
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Patent Citations Received
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US Patent 11785783 Spin logic device based on spin-charge conversion and spin logic array using the same
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US Patent 10529775 Two-terminal spintronic devices
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US Patent 11552242 Weyl semimetal material for magnetic tunnel junction
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US Patent 11250896 Valley spin hall effect based non-volatile memory
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US Patent 11289644 Magnetic tunnel junction having all-around structure
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US Patent 11328757 Topological material for trapping charge and switching a ferromagnet
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US Patent 11462682 Work function structure for voltage-controlled magnetic anisotropy
Patent Inventor Names
Mahdi Jamali
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Yang Lv
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Jian-Ping Wang
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
10283561
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Patent Primary Examiner
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Tha-O H Bui
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