Patent attributes
A semiconductor device and a method for fabricating the semiconductor device are provided. The method includes providing a base substrate including a first region and a second region; and forming a first doped region in the first region, and a second doped region in the second region. The second doped region is doped with blocking ions. The method also includes forming a first metal layer on a surface of the first doped region and on a surface of the second doped region; and forming a second metal layer on a surface of the first metal layer. The second metal layer is made of a material different from the first metal layer. Further, the method includes forming a first metal silicide layer and a second metal silicide layer by performing an annealing process. The blocking ions block atoms of the second metal layer from diffusing into the second metal silicide layer.
