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US Patent 10302826 Controlling etch angles by substrate rotation in angled etch tools

Patent 10302826 was granted and assigned to Applied Materials on May, 2019 by the United States Patent and Trademark Office.

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Contents

Is a
Patent
Patent
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Patent attributes

Patent Applicant
Applied Materials
Applied Materials
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Current Assignee
Applied Materials
Applied Materials
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
103028260
Patent Inventor Names
Morgan Evans0
Rutger Meyer Timmerman Thijssen0
Joseph C. Olson0
Date of Patent
May 28, 2019
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Patent Application Number
159931350
Date Filed
May 30, 2018
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Patent Citations Received
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US Patent 12106935 Modulation of rolling k vectors of angled gratings
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US Patent 11670482 Modulation of rolling k vectors of angled gratings
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US Patent 11333896 Fabrication of diffraction gratings
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US Patent 11367589 Modulation of ion beam angle
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US Patent 11380578 Formation of angled gratings
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US Patent 11387071 Multi-source ion beam etch system
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US Patent 11852853 Etch improvement
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US Patent 10712481 Fabricating of diffraction grating by ion beam etching
Patent Primary Examiner
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Roberts P Culbert
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Patent abstract

Embodiments described herein relate to methods of forming gratings with different slant angles on a substrate and forming gratings with different slant angles on successive substrates using angled etch systems. The methods include positioning portions of substrates retained on a platen in a path of an ion beam. The substrates have a grating material disposed thereon. The ion beam is configured to contact the grating material at an ion beam angle ϑ relative to a surface normal of the substrates and form gratings in the grating material. The substrates are rotated about an axis of the platen resulting in rotation angles ϕ between the ion beam and a surface normal of the gratings. The gratings have slant angles ϑ′ relative to the surface normal of the substrates. The rotation angles ϕ selected by an equation ϕ=cos−1 (tan(ϑ′)/tan(ϑ)).

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