US Patent 10304846 Three dimensional integrated circuits employing thin film transistors

An integrated circuit which enables lower cost and improved features compared to standard crystalline silicon integrated circuits by utilizing thin film transistors (TFTs) in 2D and 3D memory and logic devices, including NAND flash memory and other nonvolatile memories such as RRAM, NRAM, MRAM, FeRAM or PCRAM. By utilizing TFTs, density is improved and die area and costs are reduced. Volumetric memory arrays of several layers may be fabricated with greatly reduced area requirements for periphery circuits and routing. Under 5% area requirements are possible. Ultra-wide I/O may be implemented without die area penalty. Vertical TFTs and logic gates provide better density and high speed approaching or exceeding that of crystalline silicon.