US Patent 10305027 Magnetoresistive element and magnetic memory device
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Patent abstract
According to one embodiment, a magnetoresistive element includes a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer. The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer. The first nonmagnetic layer includes an oxide including an inverse-spinel structure.
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Patent Inventor Names
Hiroaki Sukegawa0
Junichi Ito0
Kazuhiro Hono0
Mohamed Belmoubarik0
Naoharu Shimomura0
Po-Han Cheng0
Seiji Mitani0
Tadakatsu Ohkubo0
Tadaomi Daibou0
Yushi Kato0
Yuuzo Kamiguchi0
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US Patent 10305027 Magnetoresistive element and magnetic memory device
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Is a
Patent jurisdiction
Patent number
10305027
Date of patent
May 28, 2019
Patent application number
15699749
Date Filed
September 8, 2017
Patent primary examiner
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